1994. 5. 11 1/1 semiconductor technical data KTC9011 epitaxial planar npn transistor revision no : 0 high frequency application. hf, vhf band amplifier application. feature high power gain : gpe=29db(typ.) at f=10.7mhz. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 40 - 198 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v transition frequency f t v cb =10v, i c =1ma, f=100mhz 100 - 400 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 - pf note : h fe classification e:40 59, f:54 80, g:72 108, h:97 146, i:132 198
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